TK16A60W MOSFET

Type Designator: TK16A60W

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 15.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 38 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 35 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO-220SIS