IXTQ130N10T MOSFET

Type Designator: IXTQ130N10T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 104 nC

Rise Time (tr): 67 nS

Maximum Drain-Source On-State Resistance (Rds): 0.0091 Ohm

Package: TO3P