IRLB3036PBF MOSFET

Type Designator: IRLB3036PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 380 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 195 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 140 nC

Rise Time (tr): 220 nS

Drain-Source Capacitance (Cd): 1020 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: TO220AB