IRFS38N20D MOSFET

Type Designator: IRFS38N20D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 320 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 44 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 76 nC

Rise Time (tr): 95 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.054 Ohm

Package: D2PAK