IRFP7530PBF MOSFET

Type Designator: IRFP7530PBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 341 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V

Maximum Drain Current |Id|: 195 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 141 nS

Drain-Source Capacitance (Cd): 1266 pF

Maximum Drain-Source On-State Resistance (Rds): 0.002 Ohm

Package: TO247