IRF7842TR MOSFET

Type Designator: IRF7842TR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 205 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038(typ) Ohm

Package: SO8