IRF7343TRPBF

Type Designator: IRF7343TRPBF

Type of Transistor: MOSFET

Type of Control Channel: NP -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 4.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: SO8