IRF3709ZS MOSFET

Type Designator: IRF3709ZS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.25 V

Maximum Drain Current |Id|: 87 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 17 nC

Rise Time (tr): 41 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0063 Ohm

Package: TO263