IPA60R180P7S MOSFET

Type Designator: IPA60R180P7S

Marking Code: 60S180P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 26 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 19 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO220FP