IKW40N120CS6 IGBT

Type Designator: IKW40N120CS6

Type: IGBT + Anti-Parallel Diode

Marking Code: K40MCS6

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 39

Collector Capacity (Cc), typ, pF: 185

Total Gate Charge (Qg), typ, nC: 285

Package: TO247