SI2301CDS-T1-GE3 - (N1A0G) SOT-23 2.2A 20V 1.25W 0.13OHM P-CHANNEL MOSFET
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SI2301CDS-T1-GE3 SOT-23 2.2A 20V 1.25W 0.13OHM P-CHANNEL MOSFET
SI2301 MOSFET
Type Designator: SI2301
Marking Code: A1sHB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.45 V
Maximum Drain Current |Id|: 2.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 223 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Package: SOT23
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