IXTH24N50L MOSFET

Type Designator: IXTH24N50L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 400 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 24 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 160 nC

Rise Time (tr): 500 nS

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO247