IXTQ76N25T MOSFET

Type Designator: IXTQ76N25T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 76 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 92 nC

Rise Time (tr): 148 nS

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: TO3P