IXTQ75N10P TO-3P 75A 100V 360W 0.025 OHM N-CHANNEL MOSFET
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IXTQ75N10P TO-3P 75A 100V 360W 0.025 OHM N-CHANNEL MOSFET
IXTQ75N10P MOSFET
Type Designator: IXTQ75N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 360 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 74 nC
Rise Time (tr): 120 nS
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO3P
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