TK10A80E TO-220SIS 10A 800V MOSFET
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TK10A80E MOSFET. Datasheet pdf. Equivalent
Type Designator: TK10A80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 46 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO-220SIS
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