HY4903B TO-263 290A 30V 214W 0.002OHM N-CHANNEL MOSFET
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HY4903B TO-263 290A 30V 214W 0.002OHM N-CHANNEL MOSFET
HY4903B MOSFET
Type Designator: HY4903B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 290 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 247 nC
Rise Time (tr): 120 nS
Drain-Source Capacitance (Cd): 1236 pF
Maximum Drain-Source On-State Resistance (Rds): 0.002 Ohm
Package: TO263
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