STP11NM60N TO-220 10A 600V 90W 0.45Ω N-CHANNEL MOSFET
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STP11NM60N TO-220 10A 600V 90W 0.45Ω N-CHANNEL MOSFET
STP11NM60N MOSFET
Type Designator: STP11NM60N
Marking Code: P11NM60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 31 nC
Rise Time (tr): 18.5 nS
Drain-Source Capacitance (Cd): 44 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TO-220
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