FQT7N10L SOT-223 1.7A 100V 2W 0.35Ω N-CHANNEL MOSFET
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FQT7N10L SOT-223 1.7A 100V 2W 0.35Ω N-CHANNEL MOSFET
FQT7N10L
Type Designator: FQT7N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1.7 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
Package: SOT223
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