TGAN60N60F2DS IGBT

Type Designator: TGAN60N60F2DS

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 357

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75

Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 46

Collector Capacity (Cc), typ, pF: 160

Total Gate Charge (Qg), typ, nC: 150

Package: TO3PN