SI2300DS N-Channel 30 V (D-S) MOSFET
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N-Channel 30 V (D-S) MOSFET
Marking code: P2
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converter for portable
devices
• Load switch
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. Maximum under steady state conditions is 130 °C/W
PRODUCT SUMMARY
VDS (V) 30
RDS(on) max. () at VGS = 4.5 V 0.068
RDS(on) max. () at VGS = 2.5 V 0.085
Qg typ. (nC) 3
ID (A) a 3.6
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and halogen-free Si2300DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 30
V
Gate-source voltage VGS ± 12
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
3.6 a
A
TC = 70 °C 3
TA = 25 °C 3.1 b, c
TA = 70 °C 2.5 b, c
Pulsed drain current IDM 15
Continuous source-drain diode current
TC = 25 °C
IS
1.4
TA = 25 °C 0.9 b, c
Maximum power dissipation
TC = 25 °C
PD
1.7
W
TC = 70 °C 1.1
TA = 25 °C 1.1 b, c
TA = 70 °C 0.7 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b, d t 5 s RthJA 90 115
°C/W
Maximum junction-to-foot (drain) Steady state RthJF 60 75
Si2300DS
www.vishay.com Vishay Siliconix
S10-0111-Rev. A, 18-Jan-10 2 Document Number: 65701
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 30 - - V
VDS temperature coefficient VDS/TJ ID = 250 μA
- 21 -
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ - -3.2 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 30 V, VGS = 0 V - - 1
μA
VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10
On-state drain current a ID(on) VDS 5 V, VGS = 10 V 10 - - A
Drain-source on-state resistance a RDS(on)
VGS = 4.5 V, ID = 2.9 A - 0.055 0.068
VGS = 2.5 V, ID = 2.6 A - 0.070 0.085
Forward transconductance a gfs VDS = 15 V, ID = 2.9 A - 13 - S
Dynamic b
Input capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
- 320 -
Output capacitance Coss - 45 - pF
Reverse transfer capacitance Crss - 19 -
Total gate charge Qg
VDS = 15 V, VGS = 10 V, ID = 3.1 A - 6.5 10
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.1 A
- 3 4.5
Gate-source charge Qgs - 0.8 -
Gate-drain charge Qgd - 0.5 -
Gate resistance Rg f = 1 MHz 0.6 3.2 6.4
Turn-on delay time td(on)
VDD = 15 V, RL = 6
ID 2.5 A, VGEN = 4.5 V, Rg = 1
- 10 15
ns
Rise time tr - 15 25
Turn-off delay time td(off) - 20 30
Fall time tf - 11 20
Turn-on delay time td(on)
VDD = 15 V, RL = 6
ID 2.5 A, VGEN = 10 V, Rg = 1
- 5 10
Rise time tr - 12 20
Turn-off delay time td(off) - 15 25
Fall time tf - 10 15
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - 1.4
A
Pulse diode forward current ISM - - 15
Body diode voltage VSD IS = 2.5 A, VGS = 0 V - 0.8 1.2 V
Body diode reverse recovery time trr
IF = 2.5 A, di/dt = 100 A/μs,
TJ = 25 °C
- 11 20 ns
Body diode reverse recovery charge Qrr - 5 10 nC
Reverse recovery fall time ta - 7 -
ns
Reverse recovery rise time tb - 4 -
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