NCE0110K TO-252 9.6A 100V 30W 0.14OHM N-CHANNEL MOSFET
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NCE0110K TO-252 9.6A 100V 30W 0.14OHM N-CHANNEL MOSFET
NCE0110K MOSFET
Type Designator: NCE0110K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 9.6 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15.5 nC
Rise Time (tr): 7.4 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
Package: TO252
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