MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT TRANSISTOR
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MJD200 TO-252 5A 25V 12.5W NPN BJT TRANSISTOR
MJD200
Type Designator: MJD200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO252
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