MJ802G TO-3 30A 100V 200W NPN BIPOLAR TRANSISTOR
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329,24 TL
MJ802G TO-3 30A 100V 200W NPN BIPOLAR TRANSISTOR
MJ802G
Type Designator: MJ802G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
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