MDP10N50TH TO-220 10A 500V 141W 0.75Ω N-CHANNEL MOSFET
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MDP10N50 TO-220 10A 500V 141W 0.75Ω N-CHANNEL MOSFET
MDP10N50TH MOSFET
Type Designator: MDP10N50TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 141 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 108 pF
Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm
Package: TO-220
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