IXFH80N10Q MOSFET

Type Designator: IXFH80N10Q

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 360 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 70 nS

Drain-Source Capacitance (Cd): 1600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO247