IXFH40N85X MOSFET

Type Designator: IXFH40N85X

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 860 W

Maximum Drain-Source Voltage |Vds|: 850 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 98 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 3690 pF

Maximum Drain-Source On-State Resistance (Rds): 0.145 Ohm

Package: TO247