IRFP4468PBF TO-247 100V 290A 520W 2.6mΩ N-CHANNEL MOSFET
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IRFP4468PBF
Type Designator: IRFP4468PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 520 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 195 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 540 nC
Rise Time (tr): 230 nS
Drain-Source Capacitance (Cd): 1360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
Package: TO247AC
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