IRFBG20 1000V 1.4A TO-220 MOSFET
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91,11 TL
IRFBG20 MOSFET
Type Designator: IRFBG20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 54 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 1.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 38 nC
Maximum Drain-Source On-State Resistance (Rds): 11 Ohm
Package: TO220AB
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