IRFBC40PBF 600V 6.2A TO-220 MOSFET
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60,05 TL
IRFBC40PBF MOSFET
Type Designator: IRFBC40PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 160 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO-220AB
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