IRFB5615PBF 150V 35A TO-220 MOSFET
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86,68 TL
IRFB5615PBF MOSFET
Type Designator: IRFB5615PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 144 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 23.1 nS
Drain-Source Capacitance (Cd): 155 pF
Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
Package: TO-220AB
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