IRFB18N50KPBF TO-220 17A 500V 0.26OHM 220W N-CHANNEL MOSFET
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211,21 TL
IRFB18N50KPBF
Type Designator: IRFB18N50KPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 220 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 120 nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO-220
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