IRF7343ITRPBF SOIC-8 4.7A 55V 2W 0.05OHM DUAL N AND P-CHANNEL MOSFET
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40,56 TL
IRF7343ITRPBF SOIC-8 4.7A 55V 2W 0.05OHM DUAL N AND P-CHANNEL MOSFET
IRF7343I MOSFET
Type Designator: IRF7343I
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 4.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 24 nC
Rise Time (tr): 3.2 nS
Drain-Source Capacitance (Cd): 190 pF
Maximum Drain-Source On-State Resistance (Rds): 0.05 Ohm
Package: SO8
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