IRF7342TRPBF SOIC-8 55V 3.4A 2W 0.105Ω DUAL P-CHANNEL MOSFET
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43,48 TL
IRF7342 MOSFET
Type Designator: IRF7342
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 3.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm
Package: SO8
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