IRF7314 20V 5.3A SMD SO-8 MOSFET
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IRF7314 MOSFET
Type Designator: IRF7314
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.7 V
Maximum Drain Current |Id|: 5.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 19 nC
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 470 pF
Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm
Package: SO8
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