IRF640S 18A 200V TO-263 MOSFET
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900 Adet
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0,95 USD + KDV
*3,79 TL den başlayan taksitlerle!
40,80 TL
IRF640S MOSFET
Type Designator: IRF640S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: D2PAK
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