IPD60R2K1CE TO252 2.3A 600V MOSFET
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60,05 TL
IPD60R2K1CE
Type Designator: IPD60R2K1CE
Marking Code: 6R2K1CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 22 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 2.3 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7 nS
Drain-Source Capacitance (Cd): 12 pF
Maximum Drain-Source On-State Resistance (Rds): 2.1 Ohm
Package: TO-252
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