HY5110W TO-247 316A 100V 500W 0.025Ω N-CHANNEL MOSFET
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222,61 TL
HY5110W TO-247 316A 100V 500W 0.025Ω N-CHANNEL MOSFET
HY5110W MOSFET
Type Designator: HY5110W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 500 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 316 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 356 nC
Rise Time (tr): 49 nS
Drain-Source Capacitance (Cd): 1558 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
Package: TO247
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