HY3912W TO-247 190A 125V 349W N-CHANNEL MOSFET
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*12,57 TL den başlayan taksitlerle!
135,21 TL
HY3912W TO-247 190A 125V 349W N-CHANNEL MOSFET
Type Designator: HY3912W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 349 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 185 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO247
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