HY3906P TO-220 190A 60V 220W 0.004OHM N-CHANNEL MOSFET
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99,06 TL
HY3906P TO-220 190A 60V 220W 0.004OHM N-CHANNEL MOSFET
Type Designator: HY3906P
Type Designator: HY3906P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 135 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1014 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220
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