HY3215P TO-220 120A 150V 300W 0.015OHM N-CHANNEL MOSFET
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HY3215P TO-220 120A 150V 300W 0.015OHM N-CHANNEL MOSFET
HY3215P MOSFET
Type Designator: HY3215P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 137 nC
Rise Time (tr): 39 nS
Drain-Source Capacitance (Cd): 548 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220
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