HY1607P MOSFET

ÂaââaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaaaaaaaaaaaaaaaaaaaaaqqqaaaqaaaaaaaaaaaaaaaaaaaaaâaaÂâaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaaqaaaqqaaqaaqqaaa Designator: HY1607P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 68 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 13 nS

Drain-Source Capacitance (Cd): 190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO-220