HY1403D TO-252 42A 30V 30W 0.011Ω N-CHANNEL MOSFET
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HY1403D TO-252 42A 30V 30W 0.011Ω N-CHANNEL MOSFET
HY1403D MOSFET
Type Designator: HY1403D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 251 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: TO252
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