HGT1S7N60A4DS IGBT

Type Designator: HGT1S7N60A4DS

Type: IGBT + Anti-Parallel Diode

Marking Code: G7N60A4D

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 34

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 7(typ)

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 11

Total Gate Charge (Qg), typ, nC: 37

Package: TO263