GT15J101 TO-3P 600V 15A N-CHANNEL IGBT TRANSISTOR
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165,66 TL
GT15J101
Type Designator: GT15J101
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 100
Maximum Collector-Emitter Voltage |Vce|, V: 600
Collector-Emitter saturation Voltage |Vcesat|, V: 4
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 15
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 600
Maximum Collector Capacity (Cc), pF: 1100pF
Package: TOP3
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