FQP8N90C TO-220 6.3A 900V 171W 1.9Ω N-CHANNEL MOSFET
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FQP8N90C TO-220 6.3A 900V 171W 1.9Ω N-CHANNEL MOSFET
FQP8N90C MOSFET
Type Designator: FQP8N90C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 171 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 35 nC
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO220
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