FQP6N60C TO-220 5.5A 600V 125W 2.0Ω N-CHANNEL MOSFET
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41,23 TL
FQP6N60C TO-220 5.5A 600V 125W 2.0Ω N-CHANNEL MOSFET
FQP6N60C
Type Designator: FQP6N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
Package: TO220
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