FQP2N60C TO-220 2A 600V 54W 4.7Ω N-CHANNEL MOSFET
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22,70 TL
FQP2N60C TO-220 2A 600V 54W 4.7Ω N-CHANNEL MOSFET
FQP2N60C MOSFET
Type Designator: FQP2N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 54 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 4.7 Ohm
Package: TO220
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