FQP19N20C TO-220 19A 200V 0.17Ω N-CHANNEL MOSFET
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FQP19N20C TO-220 19A 200V 0.17Ω N-CHANNEL MOSFET
FQP19N20C MOSFET
Type Designator: FQP19N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 139 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 19 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 40.5 nC
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO220
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