FQD50N06 TO-252 50A 60V 83W 0.022OHM N-CHANNEL MOSFET
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500 Adet
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0,70 USD + KDV
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28,99 TL
FQD50N06 MOSFET
Type Designator: FQD50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO-252
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