FQD11P06TM TO-252 9.4A 60V MOSFET
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1,15 USD + KDV
*4,43 TL den başlayan taksitlerle!
47,63 TL
Product Attributes
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TYPE
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DESCRIPTION
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SELECT
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|---|---|---|
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Category
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Mfr
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ON Semiconductor
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Series
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Package
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Part Status
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Active
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Current - Continuous Drain (Id) @ 25°C
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9.4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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185mOhm @ 4.7A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250µA
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Vgs (Max)
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±30V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta), 38W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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D-Pak
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Drain to Source Voltage (Vdss)
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60 V
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Gate Charge (Qg) (Max) @ Vgs
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17 nC @ 10 V
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Input Capacitance (Ciss) (Max) @ Vds
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550 pF @ 25 V
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Base Product Number
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